WSD3023DN56 N-Ch a P-Sianel 30V/-30V 14A/-12A DFN5*6-8 WINSOK MOSFET
Disgrifiad Cyffredinol
Y WSD3023DN56 yw'r ffos perfformiad uchaf N-ch a P-ch MOSFETs gyda dwysedd celloedd uchel iawn, sy'n darparu RDSON rhagorol a thâl giât ar gyfer y rhan fwyaf o'r cymwysiadau trawsnewidydd byc cydamserol. Mae'r WSD3023DN56 yn bodloni'r gofyniad RoHS a Chynnyrch Gwyrdd 100% EAS gwarantedig gyda dibynadwyedd swyddogaeth lawn wedi'i gymeradwyo.
Nodweddion
Technoleg ffos dwysedd celloedd uchel uwch, Tâl Giât Uchel Isel, Dirywiad effaith CdV/dt Ardderchog, 100% EAS Gwarantedig, Dyfais Werdd Ar Gael.
Ceisiadau
Trawsnewidydd Buck Cydamserol Pwynt-o-Llwyth Amlder Uchel ar gyfer MB/NB/UMPC/VGA, System Bwer Rhwydwaith DC-DC, Gwrthdröydd Golau Cefn CCFL, Dronau, moduron, electroneg modurol, offer mawr.
rhif deunydd cyfatebol
PANJIT PJQ5606
Paramedrau pwysig
| Symbol | Paramedr | Graddio | Unedau | |
| N-Ch | P-Ch | |||
| VDS | Foltedd Draen-Ffynhonnell | 30 | -30 | V |
| VGS | Foltedd Gate-Ffynhonnell | ±20 | ±20 | V |
| ID | Cerrynt Draenio Parhaus, VGS(NP) = 10V, Ta = 25 ℃ | 14* | -12 | A |
| Cerrynt Draenio Parhaus, VGS(NP) = 10V, Ta = 70 ℃ | 7.6 | -9.7 | A | |
| CDU a | Draen curiad y galon wedi'i brofi, VGS(NP)=10V | 48 | -48 | A |
| EAS c | Egni eirlithriad, pwls sengl, L=0.5mH | 20 | 20 | mJ |
| IAS c | Cerrynt eirlithriadau, pwls sengl, L=0.5mH | 9 | -9 | A |
| PD | Cyfanswm gwasgariad pŵer, Ta = 25 ℃ | 5.25 | 5.25 | W |
| TSTG | Amrediad Tymheredd Storio | -55 i 175 | -55 i 175 | ℃ |
| TJ | Amrediad Tymheredd Cyffordd Weithredol | 175 | 175 | ℃ |
| RqJA b | Ymwrthedd Thermol - Cyffordd i Gyflwr Amgylchynol, Sefydlog | 60 | 60 | ℃/W |
| RqJC | Ymwrthedd Thermol - Cyffordd i Achos, Cyflwr Sefydlog | 6.25 | 6.25 | ℃/W |
| Symbol | Paramedr | Amodau | Minnau. | Teip. | Max. | Uned |
| BVDSS | Foltedd Dadelfennu Draen-Ffynhonnell | VGS=0V , ID=250uA | 30 | --- | --- | V |
| RDS(YMLAEN)d | Ar-wrthiant Ffynhonnell Draen Statig | VGS=10V , ID=8A | --- | 14 | 18.5 | mΩ |
| VGS=4.5V , ID=5A | --- | 17 | 25 | |||
| VGS(th) | Foltedd Trothwy Gate | VGS=VDS , ID =250uA | 1.3 | 1.8 | 2.3 | V |
| IDSS | Draen-Ffynhonnell Gollyngiadau Cyfredol | VDS=20V, VGS=0V, TJ=25℃ | --- | --- | 1 | uA |
| VDS=20V, VGS=0V, TJ=85℃ | --- | --- | 30 | |||
| IGSS | Gollyngiadau Gate-Ffynhonnell Cyfredol | VGS=±20V, VDS=0V | --- | --- | ±100 | nA |
| Rg | Gwrthiant Gate | VDS=0V, VGS=0V , f=1MHz | --- | 1.7 | 3.4 | Ω |
| Qge | Cyfanswm Tâl Giât | VDS=15V, VGS=4.5V, IDS=8A | --- | 5.2 | --- | nC |
| Qgse | Tâl Gate-Ffynhonnell | --- | 1.0 | --- | ||
| Qgde | Tâl Gate-Drain | --- | 2.8 | --- | ||
| Td(on)e | Amser Oedi Troi Ymlaen | VDD=15V, RL=15R, IDS=1A, VGEN=10V, RG=6R. | --- | 6 | --- | ns |
| Tre | Amser Codi | --- | 8.6 | --- | ||
| Td(off)e | Amser Oedi Diffodd | --- | 16 | --- | ||
| Tfe | Amser Cwymp | --- | 3.6 | --- | ||
| Cisse | Cynhwysedd Mewnbwn | VDS=15V, VGS=0V , f=1MHz | --- | 545 | --- | pF |
| Cosse | Cynhwysedd Allbwn | --- | 95 | --- | ||
| Crsse | Cynhwysedd Trosglwyddo Gwrthdro | --- | 55 | --- |
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